取消
数量
价格
总价
1
$1.8480
$1.8480
10
$1.5330
$15.3300
100
$1.2180
$121.8000
500
$1.0290
$514.5000
2500
$0.8295
$2,073.7500
5000
$0.7980
$3,990.0000
12500
$0.7770
$9,712.5000
| 类型 | 描述 |
| 制造商 | EPC |
| 系列 | eGaN® |
| 包裹 | 卷带式 (TR) |
| 产品状态 | OBSOLETE |
| 包装/箱 | 9-VFBGA |
| 安装类型 | Surface Mount |
| 配置 | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| 工作温度 | -40°C ~ 150°C (TJ) |
| 技术 | GaNFET (Gallium Nitride) |
| 漏源电压 (Vdss) | 60V, 100V |
| 电流 - 连续漏极 (Id) @ 25°C | 1.7A, 500mA |
| 输入电容 (Ciss)（最大值）@Vds | 22pF @ 30V, 7pF @ 30V |
| Rds On（最大）@Id、Vgs | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V |
| 栅极电荷 (Qg)（最大值）@Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| Vgs(th)（最大值）@Id | 2.5V @ 100µA, 2.5V @ 20µA |
| 供应商设备包 | 9-BGA (1.35x1.35) |
