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MT16HTS51264HY-667A1
MT16HTS51264HY-667A1 datasheet pdf and Memory - Modules product details from Micron Technology Inc. stock available at Utmel
MT16HTS51264HY-667A1
内存模块
Micron Technology Inc.
MT16HTS51264HY-
-
200-SODIMM
YES
image of 内存模块>MT16HTS51264HY-667A1
image of 内存模块>MT16HTS51264HY-667A1
MT16HTS51264HY-667A1
内存模块
Micron Technology Inc.
MT16HTS51264HY-
-
200-SODIMM
NO
TYPEDESCRIPTION
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Published 2010
JESD-609 Code e4
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
ECCN Code EAR99
Terminal Finish GOLD
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature AUTO/SELF REFRESH
HTS Code 8542.32.00.36
Terminal Position ZIG-ZAG
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 200
Qualification Status Not Qualified
Operating Supply Voltage 1.8V
Number of Elements 16
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 4GB
Number of Ports 1
Speed 667MT/s
Memory Type DDR2 SDRAM
Operating Mode SYNCHRONOUS
Clock Frequency 333MHz
Supply Current-Max 2.824mA
Organization 512MX64
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.128A
Memory Density 34359738368 bit
Max Frequency 667MHz
Access Time (Max) 0.45 ns
I/O Type COMMON
Refresh Cycles 8192
Access Mode DUAL BANK PAGE BURST
Length 67.6mm
Height Seated (Max) 3.8mm
Width 30mm
RoHS Status ROHS3 Compliant
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