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  • image of 结型场效应管晶体管>PMBFJ174,215
  • image of 结型场效应管晶体管>PMBFJ174,215
PMBFJ174,215
PMBFJ174,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Utmel
PMBFJ174,215
结型场效应管晶体管
NXP USA Inc.
PMBFJ174,215 da
-
TO-236-3, SC-59, SOT-23-3
YES
image of 结型场效应管晶体管>PMBFJ174,215
image of 结型场效应管晶体管>PMBFJ174,215
PMBFJ174,215
结型场效应管晶体管
NXP USA Inc.
PMBFJ174,215 da
-
TO-236-3, SC-59, SOT-23-3
NO
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ174
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 300mW
FET Type P-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V VGS
Drain-source On Resistance-Max 85Ohm
DS Breakdown Voltage-Min 30V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id 5V @ 10nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 85Ohm
RoHS Status ROHS3 Compliant
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