| TYPE | DESCRIPTION |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Supplier Device Package | TO-268 |
| Weight | 4.500005g |
| Number of Terminals | 2 |
| Transistor Element Material | SILICON |
| Mounting Style | SMD/SMT |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Manufacturer | IXYS |
| Brand | IXYS |
| RoHS | Details |
| Package | Tube |
| Base Product Number | IXGT20 |
| Mfr | IXYS |
| Product Status | Obsolete |
| Package Shape | RECTANGULAR |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | HiPerFAST™ |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 150W |
| Technology | Si |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*20N60 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | Single |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Product Type | IGBT Transistors |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| JEDEC-95 Code | TO-268AA |
| Collector Emitter Breakdown Voltage | 600V |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 40A |
| Power Dissipation-Max (Abs) | 150 W |
| Turn On Time | 50 ns |
| Test Condition | 480V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Collector Current-Max (IC) | 40 A |
| Turn Off Time-Nom (toff) | 360 ns |
| IGBT Type | -- |
| Collector-Emitter Voltage-Max | 600 V |
| Gate Charge | 90nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 15ns/150ns |
| Switching Energy | 150μJ (on), 700μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 150ns |
| Product Category | IGBT Transistors |
| Width | 14 mm |
| Height | 5.1 mm |
| Length | 16.05 mm |
| RoHS Status | RoHS Compliant |
 | |
| 原装正品 | 每颗芯片都来自原厂 |
| |
| 主要产品 | 只生厂材料 |
| |
| 现货库存 | 只生产原材料 |
| |
| 原装库存 | Bom 单 | 价格实惠 |
