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  • image of 单金属氧化物半导体场效应晶体管晶体管>NTMFS4839NT1G
  • image of 单金属氧化物半导体场效应晶体管晶体管>NTMFS4839NT1G
NTMFS4839NT1G
N-Channel Tape & Reel (TR) 5.5m Ω @ 30A, 10V ±20V 1588pF @ 12V 18nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4839NT1G
单金属氧化物半导体场效应晶体管晶体管
ON Semiconductor
N-Channel Tape
-
8-PowerTDFN, 5 Leads
YES
image of 单金属氧化物半导体场效应晶体管晶体管>NTMFS4839NT1G
image of 单金属氧化物半导体场效应晶体管晶体管>NTMFS4839NT1G
NTMFS4839NT1G
单金属氧化物半导体场效应晶体管晶体管
ON Semiconductor
N-Channel Tape
-
8-PowerTDFN, 5 Leads
NO
TYPEDESCRIPTION
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 870mW Ta 41.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.17W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1588pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 132A
RoHS Status RoHS Compliant
Lead Free Lead Free
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