1
3.79048
3.79048
10
3.575925
35.75925
100
3.373514
337.3514
500
3.18256
1591.28
1000
3.002415
3002.415
TYPE | DESCRIPTION |
Surface Mount | NO |
Number of Terminals | 3 |
Transistor Element Material | SILICON |
Package Shape | RECTANGULAR |
Manufacturer | International Rectifier |
JESD-609 Code | e3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Terminal Position | SINGLE |
Terminal Form | THROUGH-HOLE |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Transistor Application | SWITCHING |
Polarity/Channel Type | N-CHANNEL |
JEDEC-95 Code | TO-251AA |
Drain Current-Max (Abs) (ID) | 90 A |
Drain-source On Resistance-Max | 0.009 Ω |
Pulsed Drain Current-Max (IDM) | 360 A |
DS Breakdown Voltage-Min | 30 V |
Avalanche Energy Rating (Eas) | 382 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 120 W |
原装正品 | 每颗芯片都来自原厂 |
| |
主要产品 | 只生厂材料 |
| |
现货库存 | 只生产原材料 |
|
原装库存 | Bom 单 | 价格实惠 |