1
5.81344
5.81344
10
5.484377
54.84377
100
5.173941
517.3941
500
4.881076
2440.538
1000
4.604789
4604.789
| TYPE | DESCRIPTION |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | AVALANCHE RATED |
| HTS Code | 8541.29.00.95 |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 225 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | S-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.1W Ta 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 8A |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.85Ohm |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 510 mJ |
| RoHS Status | Non-RoHS Compliant |
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| 原装正品 | 每颗芯片都来自原厂 |
| |
| 主要产品 | 只生厂材料 |
| |
| 现货库存 | 只生产原材料 |
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| 原装库存 | Bom 单 | 价格实惠 |
