| TYPE | DESCRIPTION |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28.009329mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2016 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 235mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 420mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 235m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V |
| Rise Time | 13ns |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 1A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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| 原装正品 | 每颗芯片都来自原厂 |
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| 主要产品 | 只生厂材料 |
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| 现货库存 | 只生产原材料 |
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| 原装库存 | Bom 单 | 价格实惠 |
