TYPE | DESCRIPTION |
Factory Lead Time | 12 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | HEXFET® |
Published | 1997 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 250mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | ULTRA LOW RESISTANCE |
Voltage - Rated DC | -20V |
Max Power Dissipation | 2W |
Terminal Form | GULL WING |
Current Rating | -2.3A |
Base Part Number | IRF7104PBF |
Number of Elements | 2 |
Row Spacing | 6.3 mm |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 12 ns |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 250m Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 2.3A |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 16ns |
Drain to Source Voltage (Vdss) | 20V |
Fall Time (Typ) | 30 ns |
Turn-Off Delay Time | 42 ns |
Continuous Drain Current (ID) | -2.3A |
Threshold Voltage | -3V |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 10A |
Dual Supply Voltage | -20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Recovery Time | 100 ns |
FET Feature | Logic Level Gate |
Nominal Vgs | -3 V |
Height | 1.4986mm |
Length | 4.9784mm |
Width | 3.9878mm |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |