TYPE | DESCRIPTION |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Factory Lead Time | 5 Weeks |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101, PowerTrench® |
Published | 2007 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G8 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Power - Max | 900mW |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 28m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 7A 5A |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Drain Current-Max (Abs) (ID) | 7A |
Drain-source On Resistance-Max | 0.028Ohm |
Pulsed Drain Current-Max (IDM) | 20A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 54 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 2W |
FET Feature | Logic Level Gate |
RoHS Status | ROHS3 Compliant |
原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |