1
0.83628
0.83628
10
0.788943
7.88943
100
0.744286
74.4286
500
0.702157
351.0785
1000
0.662412
662.412
TYPE | DESCRIPTION |
Factory Lead Time | 23 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 73.992255mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Max Power Dissipation | 1.8W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Reference Standard | AEC-Q101 |
Number of Elements | 2 |
Number of Channels | 2 |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 8.7 ns |
Power - Max | 1.3W |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 24m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 7A 5.1A |
Gate Charge (Qg) (Max) @ Vgs | 19.1nC @ 10V |
Rise Time | 19.6ns |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 25.5 ns |
Turn-Off Delay Time | 34.9 ns |
Continuous Drain Current (ID) | 5.1A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 7A |
Drain to Source Breakdown Voltage | 40V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 1.5mm |
Length | 4.95mm |
Width | 3.95mm |
RoHS Status | ROHS3 Compliant |
原装正品 | 每颗芯片都来自原厂 |
| |
主要产品 | 只生厂材料 |
| |
现货库存 | 只生产原材料 |
|
原装库存 | Bom 单 | 价格实惠 |