TYPE | DESCRIPTION |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2016 |
JESD-609 Code | e1 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 21 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | AVALANCHE RATED |
Max Power Dissipation | 138W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 21 |
JESD-30 Code | R-XUFM-X21 |
Qualification Status | Not Qualified |
Number of Elements | 6 |
Configuration | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 138W |
Case Connection | ISOLATED |
FET Type | 6 N-Channel (3-Phase Bridge) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.5m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 4530pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
Drain to Source Voltage (Vdss) | 75V |
Continuous Drain Current (ID) | 120A |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.0045Ohm |
Pulsed Drain Current-Max (IDM) | 250A |
DS Breakdown Voltage-Min | 75V |
Avalanche Energy Rating (Eas) | 1500 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Standard |
RoHS Status | RoHS Compliant |
原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |