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  • image of 预偏置双极性结型晶体管>DDTD142JU-7-F
  • image of 预偏置双极性结型晶体管>DDTD142JU-7-F
DDTD142JU-7-F
DDTD142JU-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Diodes Incorporated stock available at Utmel
DDTD142JU-7-F
预偏置双极性结型晶体管
Diodes Incorporated
DDTD142JU-7-F d
-
SC-70, SOT-323
YES
: 0.281

1

0.281

0.281

10

0.265094

2.65094

100

0.250089

25.0089

500

0.235933

117.9665

1000

0.222578

222.578

image of 预偏置双极性结型晶体管>DDTD142JU-7-F
image of 预偏置双极性结型晶体管>DDTD142JU-7-F
DDTD142JU-7-F
预偏置双极性结型晶体管
Diodes Incorporated
DDTD142JU-7-F d
-
SC-70, SOT-323
NO
TYPEDESCRIPTION
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.28
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTD142
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 56
Resistor - Base (R1) 470 Ω
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 10 k Ω
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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