+86-13723477211
  • image of 单个双极性结型晶体管>2N1613
  • image of 单个双极性结型晶体管>2N1613
2N1613
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Tube Through Hole
2N1613
单个双极性结型晶体管
STMicroelectronics
-
TO-205AD, TO-39-3 Metal Can
YES
image of 单个双极性结型晶体管>2N1613
image of 单个双极性结型晶体管>2N1613
2N1613
单个双极性结型晶体管
STMicroelectronics
-
TO-205AD, TO-39-3 Metal Can
NO
TYPEDESCRIPTION
Package / Case TO-205AD, TO-39-3 Metal Can
Mounting Type Through Hole
Mount Through Hole
Transistor Element Material SILICON
Packaging Tube
Operating Temperature -65°C~200°C TJ
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Voltage - Rated DC 75V
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2N16
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
RoHS Status ROHS3 Compliant
Lead Free Lead Free
1.jpg
 原装正品       每颗芯片都来自原厂


2.jpg
       

 主要产品       只生厂材料


3.jpg
        

 现货库存       只生产原材料

4.jpg       

原装库存Bom 单价格实惠


captcha

+86-13723477211

sales@fuchaoic.com

点击这里给我发消息
0