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  • image of 射频双极性结型晶体管>NTE195A
  • image of 射频双极性结型晶体管>NTE195A
NTE195A
NTE195A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NTE Electronics, Inc stock available at Utmel
NTE195A
射频双极性结型晶体管
NTE Electronics, Inc
NTE195A datashe
-
TO-205AD, TO-39-3 Metal Can
YES
image of 射频双极性结型晶体管>NTE195A
image of 射频双极性结型晶体管>NTE195A
NTE195A
射频双极性结型晶体管
NTE Electronics, Inc
NTE195A datashe
-
TO-205AD, TO-39-3 Metal Can
NO
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Surface Mount NO
Supplier Device Package TO-39
Number of Terminals 3
Transistor Element Material SILICON
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Manufacturer NTE Electronics
Emitter-Base Voltage 3(V)
Package Type TO-39
Collector-Base Voltage 70(V)
Operating Temp Range -65C to 200C
Collector Current (DC) 1.5(A)
Package Shape ROUND
Series -
Operating Temperature -
ECCN Code EAR99
Type NPN
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Power Dissipation 8(W)
Case Connection COLLECTOR
Power - Max 8W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 400mA, 2V
JEDEC-95 Code TO-39
Gain 10dB
Voltage - Collector Emitter Breakdown (Max) 70V
Current - Collector (Ic) (Max) 1.5A
Frequency - Transition -
Power Dissipation-Max (Abs) 8 W
Collector Current-Max (IC) 1.5 A
DC Current Gain-Min (hFE) 30
Noise Figure (dB Typ @ f) -
Power Dissipation Ambient-Max 8 W
Power Gain 10(MIN)(dB)
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