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  • image of 射频双极性结型晶体管>MPSH17G
  • image of 射频双极性结型晶体管>MPSH17G
MPSH17G
MPSH17G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at Utmel
MPSH17G
射频双极性结型晶体管
ON Semiconductor
MPSH17G datashe
-
TO-226-3, TO-92-3 (TO-226AA)
YES
image of 射频双极性结型晶体管>MPSH17G
image of 射频双极性结型晶体管>MPSH17G
MPSH17G
射频双极性结型晶体管
ON Semiconductor
MPSH17G datashe
-
TO-226-3, TO-92-3 (TO-226AA)
NO
TYPEDESCRIPTION
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 15V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 5mA
Frequency 800MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSH17
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 800MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA 10V
Collector Emitter Breakdown Voltage 15V
Gain 24dB
Transition Frequency 800MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 25
Collector-Base Capacitance-Max 0.9pF
Noise Figure (dB Typ @ f) 6dB @ 200MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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