+86-13723477211
  • image of 射频双极性结型晶体管>BFR92AW,135
  • image of 射频双极性结型晶体管>BFR92AW,135
BFR92AW,135
BFR92AW,135 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at Utmel
BFR92AW,135
射频双极性结型晶体管
NXP USA Inc.
BFR92AW,135 dat
-
SC-70, SOT-323
YES
image of 射频双极性结型晶体管>BFR92AW,135
image of 射频双极性结型晶体管>BFR92AW,135
BFR92AW,135
射频双极性结型晶体管
NXP USA Inc.
BFR92AW,135 dat
-
SC-70, SOT-323
NO
TYPEDESCRIPTION
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFR92
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 300mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 15mA 10V
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 25mA
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Power Dissipation-Max (Abs) 0.3W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 1GHz ~ 2GHz
Power Dissipation Ambient-Max 0.3W
RoHS Status ROHS3 Compliant
1.jpg
 原装正品       每颗芯片都来自原厂


2.jpg
       

 主要产品       只生厂材料


3.jpg
        

 现货库存       只生产原材料

4.jpg       

原装库存Bom 单价格实惠


captcha

+86-13723477211

sales@fuchaoic.com

点击这里给我发消息
0