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  • image of 射频双极性结型晶体管>BFP540FESDH6327XTSA1
  • image of 射频双极性结型晶体管>BFP540FESDH6327XTSA1
BFP540FESDH6327XTSA1
BFP540FESDH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at Utmel
BFP540FESDH6327XTSA1
射频双极性结型晶体管
Infineon Technologies
BFP540FESDH6327
-
4-SMD, Flat Leads
YES
image of 射频双极性结型晶体管>BFP540FESDH6327XTSA1
image of 射频双极性结型晶体管>BFP540FESDH6327XTSA1
BFP540FESDH6327XTSA1
射频双极性结型晶体管
Infineon Technologies
BFP540FESDH6327
-
4-SMD, Flat Leads
NO
TYPEDESCRIPTION
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Frequency 30GHz
Base Part Number BFP540
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 3.5V
Collector Emitter Breakdown Voltage 5V
Gain 20dB
Transition Frequency 30000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 1V
Collector-Base Capacitance-Max 0.26pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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