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  • image of 射频双极性结型晶体管>2SC5551AF-TD-E
  • image of 射频双极性结型晶体管>2SC5551AF-TD-E
2SC5551AF-TD-E
2SC5551AF-TD-E datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at Utmel
2SC5551AF-TD-E
射频双极性结型晶体管
ON Semiconductor
2SC5551AF-TD-E
-
TO-243AA
YES
image of 射频双极性结型晶体管>2SC5551AF-TD-E
image of 射频双极性结型晶体管>2SC5551AF-TD-E
2SC5551AF-TD-E
射频双极性结型晶体管
ON Semiconductor
2SC5551AF-TD-E
-
TO-243AA
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.3W
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 50mA 5V
Collector Emitter Breakdown Voltage 30V
Max Frequency 3.5GHz
Transition Frequency 3500MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 2V
Continuous Collector Current 300mA
Highest Frequency Band S B
Collector-Base Capacitance-Max 4pF
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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