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  • image of 阵列双极性结型晶体管>HN1A01F-GR(TE85L,F
HN1A01F-GR(TE85L,F
HN1A01F-GR(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at Utmel
HN1A01F-GR(TE85L,F
阵列双极性结型晶体管
Toshiba Semiconductor and Storage
HN1A01F-GR(TE85
-
SC-74, SOT-457
YES
: 0.197958

1

0.197958

0.197958

10

0.186753

1.86753

100

0.176182

17.6182

500

0.166209

83.1045

1000

0.156801

156.801

image of 阵列双极性结型晶体管>HN1A01F-GR(TE85L,F
image of 阵列双极性结型晶体管>HN1A01F-GR(TE85L,F
HN1A01F-GR(TE85L,F
阵列双极性结型晶体管
Toshiba Semiconductor and Storage
HN1A01F-GR(TE85
-
SC-74, SOT-457
NO
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity PNP
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
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